t/ 20 stern ave. springfield, new jersey 07( u.s.a. absolute maximum ratings BCY59C npn silicon transistor low noise audio amplifier telephone: (973) 376-2922 (212)227-6005 fax: (973) 378-8960 symbol vces vceo vebo ic ib p.ol t.,.. t, parameter collector-amitter voltage (vae ? 0) collector-emitter voltage (ig = 0) emitter-base voltage (lc = 0) collector current base current total power dissipation at t,mt> s 25 c at tcat. s 45 *c storage and junction temperature | 45 45 7 200 50 0.39 1 85 to 200 unit v v v ma ma mw w "c dimensions symbol a (dia) bidial c d e f (dia) 0 (dia1 h 1 j inchcs min 0.209 0.178 - 0.170 0.500 0.018 max 0.230 0.195 0.030 0.210 - 0.019 0.100 0.050 0.036 0.028 0.046 0.048 millimeters mm 5.31 4.52 . 4.32 12.70 0.41 max 5.b4 4.95 0.78 s.33 . 0.48 2.54 1.27 0.91 0.71 1.17 1.22 to-18 (rev: r1) thermal data r|h t-cbbc r|h j-?mb thermal resistance junction-case thermal resistance junction-ambient max max 150 450 i c/w c/w electrical characteristics (tamb = 25 c unless otherwise specified) symbol ices icex iebo ibriebo* vce(??t>* vbe vassal)* hfe* hi. ft cc80 nf ton toff parameter collector cutoff current (vbe=0) collector cutoff currant (vbe ? - 0.2 v) emitter cutoff current voltage (ib ? 0) emitter-base breakdown voltage (lc=0) collector-emitter saturation voltage base-emitter voltage base-emitter saturation voltage dc current gain small signal current gain transition frequency emitter-base capacitance collector-base capacitance noise figure turn-on time 'um-off time test conditions vce - 45 v vce - 45 v t.mb ' 150 "c .. vce * 45 v tlm?, = 100 c veb = 5 v ie *10}ia lc = 10 ma ib = 0.25 ma lc = 100ma ib> 2.5ma lc ? 2 ma vce * 5 v lc ? 100 ma vce = 1 v lc - 10 ma ib - 0.25 ma lc = 100 ma ib = 2.5 ma lc =>10 ua vce = 5 v lc =10 ma vce ? 1 v lc =100 ma vce =1 v c = 2 ma vce = 5 v f =? 1 khz ?'? c =10 ma vce = 5 v f = 100mhz c=0 veb = 0.5v = 1 mhz e=0 vcb=10v = 1 mhz c ' 0.2 ma vce =? 5 v ?? ? 2 wl f = 1 khz c ? 10 ma vcc = 10 v bi ? 1 ma c ? 100 ma vcc '10v bi = 10 ma c " 10 ma vcc = 10 v bi = ~ ibs = 1ma c = 100 ma vcc = 10 v bi =-lb2 ?10ma mln. 45 7 0.55 0.6 0.75 250 160 40 60 250 typ. 0,1 0.1 0.12 0.4 0.65 0.75 0.7 0.9 .- 350 365 200 11 3.5 2 as 55 480 _480_ max. 10 10 20 10 0.35 0.7 0.7 0.85 1.2 460 500 15 6 6 150 150 800 800 unit na )la pa na v v v v v v v v mhz pf pf db ns ns ns ns pulsed : pulss duration - 300 us, duty cycla ? 1 %. lead 1*3 nj semi-conductora reserves the right to change test conditions, parameters limits and package dimensions without notice information nurnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use n j semi-conductors encourages customers to verify that datasheets are current before placing orders quality semi-conductors
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